ION-IMPLANTATION DAMAGE IN GAAS - TEM STUDY OF VARIATION WITH ION SPECIES AND STOICHIOMETRY

被引：7

作者：

ELLIOTT, CR

AMBRIDGE, T

HECKINGBOTTOM, R

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 06期

关键词：

D O I：

10.1016/0038-1101(78)90310-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：859 / 863

页数：5

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