DISTRIBUTION OF ELECTRICALLY ACTIVE MG IMPLANTS IN GAAS

[1] MEASUREMENT OF HIGH-RESISTIVITY SEMICONDUCTORS USING VANDERPAUW METHOD [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1973, 44 (06) : 698 - 700

[2] MG AND BE ION IMPLANTED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) : 1318 - +

[3] Lindhard J., 1963, VIDENSK SELSK MAT FY, V33, P1, DOI DOI 10.1002/ADMA.200904153

[4] van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

[5] ELECTRICAL MEASUREMENTS AND OPTICAL ACTIVATION STUDIES IN MG-IMPLANTED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3274 - 3281

[6] ZOLCH R, 1976, ION IMPLANTATION SEM, P593

[1] MEASUREMENT OF HIGH-RESISTIVITY SEMICONDUCTORS USING VANDERPAUW METHOD [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1973, 44 (06) : 698 - 700

[2] MG AND BE ION IMPLANTED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) : 1318 - +

[3] Lindhard J., 1963, VIDENSK SELSK MAT FY, V33, P1, DOI DOI 10.1002/ADMA.200904153

[4] van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

[5] ELECTRICAL MEASUREMENTS AND OPTICAL ACTIVATION STUDIES IN MG-IMPLANTED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3274 - 3281

[6] ZOLCH R, 1976, ION IMPLANTATION SEM, P593