RADIATION ANNEALING OF GAAS IMPLANTED WITH SI

[1] LOW-DOSE N-TYPE ION-IMPLANTATION INTO CR-DOPED GAAS SUBSTRATES [J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 273 - 276

[2] REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 291 - 293

[3] HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700

[4] REDISTRIBUTION OF CR IN CAPLESS-ANNEALED GAAS UNDER ARSENIC PRESSURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) : L151 - L154

[5] SUPPRESSION OF THERMAL-CONVERSION IN CR-DOPED SEMI-INSULATING GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 8229 - 8231

[6] DOUBLE-LAYERED ENCAPSULANT FOR ANNEALING ION-IMPLANTED GAAS UP TO 1100DEGREESC [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 158 - 161

[7] MIYAZAKI T, 1975, ION IMPLANTATION SEM, P41

[8] RADIATION ANNEALING OF BORON-IMPLANTED SILICON WITH A HALOGEN LAMP [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L563 - L566

[9] SEALY BJ, 1979, GALLUM ARSENIDE RELA, P476

[10] CHROMIUM REDISTRIBUTION DURING THERMAL ANNEALING OF SEMI-INSULATING GAAS AS A FUNCTION OF ENCAPSULANT AND IMPLANT FLUENCE [J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 837 - 840

[1] LOW-DOSE N-TYPE ION-IMPLANTATION INTO CR-DOPED GAAS SUBSTRATES [J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 273 - 276

[2] REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 291 - 293

[3] HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700

[4] REDISTRIBUTION OF CR IN CAPLESS-ANNEALED GAAS UNDER ARSENIC PRESSURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) : L151 - L154

[5] SUPPRESSION OF THERMAL-CONVERSION IN CR-DOPED SEMI-INSULATING GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) : 8229 - 8231

[6] DOUBLE-LAYERED ENCAPSULANT FOR ANNEALING ION-IMPLANTED GAAS UP TO 1100DEGREESC [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 158 - 161

[7] MIYAZAKI T, 1975, ION IMPLANTATION SEM, P41

[8] RADIATION ANNEALING OF BORON-IMPLANTED SILICON WITH A HALOGEN LAMP [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L563 - L566

[9] SEALY BJ, 1979, GALLUM ARSENIDE RELA, P476

[10] CHROMIUM REDISTRIBUTION DURING THERMAL ANNEALING OF SEMI-INSULATING GAAS AS A FUNCTION OF ENCAPSULANT AND IMPLANT FLUENCE [J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 837 - 840