UNIFORM P-TYPE DOPING PROFILES IN MG-24(+)-IMPLANTED, RAPIDLY ANNEALED GAAS/ALGAAS HETEROSTRUCTURES

被引：9

作者：

DESCOUTS, B

DUHAMEL, N

DAOUDKETATA, K

KRAUZ, P

GODEFROY, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 01期

关键词：

D O I：

10.1063/1.337619

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：450 / 452

页数：3

共 10 条

[1] ANNEALING OF MG IMPLANTS IN GAAS USING INCOHERENT RADIATION [J].

BLUNT, RT ;

SZWEDA, R ;

LAMB, MSM ;

CULLIS, AG .

ELECTRONICS LETTERS, 1984, 20 (11) :444-446

[2] LOW-THRESHOLD SINGLE QUANTUM WELL (60 A) GAAIAS LASERS GROWN BY MO-CVD WITH MG AS P-TYPE DOPANT [J].

BURNHAM, RD ;

STREIFER, W ;

SCIFRES, DR ;

LINDSTROM, C ;

PAOLI, TL ;

HOLONYAK, N .

ELECTRONICS LETTERS, 1982, 18 (25-2) :1095-1097

[3] MAGNESIUM-DOPED GAAS AND ALXGA1-XAS BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

PANISH, MB .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5118-5123

[4]

DAOUDKETATA K, UNPUB

[5]

DUHAMEL N, 1985, EUROPEAN SOLID STATE

[6]

MAKAI S, 1979, J APPL PHYS, V50, P1304

[7] GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR INTEGRATED-CIRCUIT APPLICATIONS [J].

MCLEVIGE, WV ;

YUAN, HT ;

DUNCAN, WM ;

FRENSLEY, WR ;

DOERBECK, FH ;

MORKOC, H ;

DRUMMOND, TJ .

ELECTRON DEVICE LETTERS, 1982, 3 (02) :43-45

[8]

TIWARI S, 1984, I PHYS C SER, V74, P83

[9] CORRELATION OF ELECTRICAL CARRIER AND ATOMIC PROFILES OF MG IMPLANTS IN GAAS [J].

YEO, YK ;

PARK, YS ;

PEDROTTI, FL ;

CHOE, BD .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6148-6153

[10]

YUAN H, 1984, FEB INT SOL STAT CIR

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