LOW-THRESHOLD SINGLE QUANTUM WELL (60 A) GAAIAS LASERS GROWN BY MO-CVD WITH MG AS P-TYPE DOPANT

被引：44

作者：

BURNHAM, RD

STREIFER, W

SCIFRES, DR

LINDSTROM, C

PAOLI, TL

HOLONYAK, N

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 25-2期

关键词：

D O I：

10.1049/el:19820748

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1095 / 1097

页数：3

相关论文

共 19 条

[1] TEMPERATURE-DEPENDENCE OF THE LASING THRESHOLD CURRENT OF DOUBLE HETEROSTRUCTURE INJECTION-LASERS DUE TO DRIFT CURRENT LOSS
ANTHONY, PJ
SCHUMAKER, NE
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 5038 - 5040
[2] LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BURNHAM, RD
SCIFRES, DR
STREIFER, W
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 228 - 230
[3] CAMRAS MD, 1982, APPL PHYS LETT, V42, P314
[4] DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1
[5] SUPPRESSION OF INTERNALLY CIRCULATING MODES IN (GAAL)AS-GAAS HETEROSTRUCTURE LASERS AND THEIR EFFECT ON CATASTROPHIC DEGRADATION AND EFFICIENCY
HENSHALL, GD
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 205 - 207
[6] HERSEE S, 1982, ELECTRON LETT, V18, P857
[7] QUANTUM-WELL HETEROSTRUCTURE LASERS
HOLONYAK, N
KOLBAS, RM
DUPUIS, RD
DAPKUS, PD
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 170 - 186
[8] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159
[9] OM-VPE GROWTH OF MG-DOPED GAAS
LEWIS, CR
DIETZE, WT
LUDOWISE, MJ
[J]. ELECTRONICS LETTERS, 1982, 18 (13) : 569 - 570
[10] CW LONGITUDINAL MODE SPECTRA OF MULTIPLE QUANTUM WELL STRIPE LASERS
LINDSTROM, C
HALIDO, D
SCIFRES, DR
BURNHAM, RD
[J]. ELECTRONICS LETTERS, 1982, 18 (20) : 876 - 878