CW LONGITUDINAL MODE SPECTRA OF MULTIPLE QUANTUM WELL STRIPE LASERS

[1] TRANSIENT AND NOISE CHARACTERISTICS OF QUANTUM-WELL HETEROSTRUCTURE LASERS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 585 - 587

[2] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER-DIODES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 19 - 21

[3] Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[4] PREPARATION AND PROPERTIES OF GA1-XALXAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (03) : 128 - 135

[5] CONTINUOUS 300-DEGREES-K LASER OPERATION OF SINGLE-QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE DIODES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1979, 34 (04) : 265 - 267

[6] CONTINUOUS ROOM-TEMPERATURE MULTIPLE-QUANTUM-WELL ALXGA1-XAS-GAAS INJECTION-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 487 - 489

[7] FAR-FIELD RADIATION-PATTERNS OF MULTIPLE QUANTUM WELL LASERS GROWN BY MO-CVD [J]. ELECTRONICS LETTERS, 1982, 18 (18) : 765 - 767

[8] HALIDO D, 1982, UNPUB J APPL PHYS

[9] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR A QUANTUM-WELL HETEROSTRUCTURE LASER [J]. SOLID-STATE ELECTRONICS, 1980, 23 (06) : 585 - 589

[10] ROOM-TEMPERATURE CONTINUOUS OPERATION OF PHOTOPUMPED MO-CVD ALXGA1-XAS-GAAS-ALXGA1-XAS QUANTUM-WELL LASERS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 73 - 75

[1] TRANSIENT AND NOISE CHARACTERISTICS OF QUANTUM-WELL HETEROSTRUCTURE LASERS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 585 - 587

[2] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER-DIODES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 19 - 21

[3] Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[4] PREPARATION AND PROPERTIES OF GA1-XALXAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (03) : 128 - 135

[5] CONTINUOUS 300-DEGREES-K LASER OPERATION OF SINGLE-QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE DIODES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1979, 34 (04) : 265 - 267

[6] CONTINUOUS ROOM-TEMPERATURE MULTIPLE-QUANTUM-WELL ALXGA1-XAS-GAAS INJECTION-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 487 - 489

[7] FAR-FIELD RADIATION-PATTERNS OF MULTIPLE QUANTUM WELL LASERS GROWN BY MO-CVD [J]. ELECTRONICS LETTERS, 1982, 18 (18) : 765 - 767

[8] HALIDO D, 1982, UNPUB J APPL PHYS

[9] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR A QUANTUM-WELL HETEROSTRUCTURE LASER [J]. SOLID-STATE ELECTRONICS, 1980, 23 (06) : 585 - 589

[10] ROOM-TEMPERATURE CONTINUOUS OPERATION OF PHOTOPUMPED MO-CVD ALXGA1-XAS-GAAS-ALXGA1-XAS QUANTUM-WELL LASERS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 73 - 75