LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：51

作者：

BURNHAM, RD

SCIFRES, DR

STREIFER, W

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 03期

关键词：

D O I：

10.1063/1.93476

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：228 / 230

页数：3

共 16 条

[1] CURRENT THRESHOLD UNIFORMITY OF SHALLOW PROTON STRIPE GAALAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

BURNHAM, RD ;

SCIFRES, DR ;

STREIFER, W .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :118-119

[2]

CAMRAS MD, UNPUB

[3] VISIBLE-SPECTRUM MULTIPLE-QUANTUM-WELL IN1-X'GAX'P1-Z'ASZ'-IN1-X GAX P1-Z ASZ (X GREATER-THAN X', Z GREATER-THAN Z') HETEROSTRUCTURE LASERS [J].

CHIN, R ;

HOLONYAK, N ;

VOJAK, BA .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4017-4021

[4] PULSED ROOM-TEMPERATURE OPERATION OF IN1-XGAXP1-ZASZ DOUBLE HETEROJUNCTION LASERS AT HIGH-ENERGY (6470 A, 1.916 EV) [J].

COLEMAN, JJ ;

HOLONYAK, N ;

LUDOWISE, MJ ;

WRIGHT, PD ;

CHIN, R ;

GROVES, WO ;

KEUNE, DL .

APPLIED PHYSICS LETTERS, 1976, 29 (03) :167-169

[5] QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

HOLONYAK, N ;

KOLBAS, RM ;

DUPUIS, RD ;

DAPKUS, PD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186

[6] TRANSVERSE-MODE STABILIZED GA1-XALXAS VISIBLE DIODE-LASERS [J].

KAJIMURA, T ;

KURODA, T ;

YAMASHITA, S ;

NAKAMURA, M ;

UMEDA, J .

APPLIED OPTICS, 1979, 18 (11) :1812-1815

[7] RED-LIGHT-EMITTING LASER-DIODES OPERATING CW AT ROOM-TEMPERATURE [J].

KRESSEL, H ;

HAWRYLO, FZ .

APPLIED PHYSICS LETTERS, 1976, 28 (10) :598-600

[8] VISIBLE GAAS0.7P0.3 CW HETEROJUNCTION LASERS [J].

KRESSEL, H ;

OLSEN, GH ;

NUESE, CJ .

APPLIED PHYSICS LETTERS, 1977, 30 (05) :249-251

[9]

Ladany I., 1976, International Electron Devices Meeting. (Technical digest), P129

[10] PROTON-ISOLATED NARROW STRIPE VISIBLE LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

MORI, Y ;

SATO, H ;

IKEDA, M ;

MATSUDA, O ;

KANEKO, K ;

WATANABE, N .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :293-295

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