VISIBLE GAAS0.7P0.3 CW HETEROJUNCTION LASERS

被引：27

作者：

KRESSEL, H ^{[1
]}

OLSEN, GH ^{[1
]}

NUESE, CJ ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 05期

关键词：

D O I：

10.1063/1.89353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：249 / 251

页数：3

共 9 条

[1]

BUIOCCHI CJ, UNPUBLISHED

[2]

BUTLER JM, UNPUBLISHED

[3] INTERFACIAL RECOMBINATION AT (ALGA)AS-GAAS HETEROJUNCTION STRUCTURES [J].

ETTENBERG, M ;

KRESSEL, H .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1538-1544

[4] RED-LIGHT-EMITTING LASER-DIODES OPERATING CW AT ROOM-TEMPERATURE [J].

KRESSEL, H ;

HAWRYLO, FZ .

APPLIED PHYSICS LETTERS, 1976, 28 (10) :598-600

[5] LOW-THRESHOLD DOUBLE HETEROJUNCTION ALGAAS-GAAS LASER-DIODES - THEORY AND EXPERIMENT [J].

KRESSEL, H ;

ETTENBERG, M .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3533-3537

[6] VAPOR-GROWN CW ROOM-TEMPERATURE GAAS-INYGA1-YP LASERS [J].

NUESE, CJ ;

OLSEN, GH ;

ETTENBERG, M .

APPLIED PHYSICS LETTERS, 1976, 29 (01) :54-56

[7] ROOM-TEMPERATURE HETEROJUNCTION LASER-DIODES FROM VAPOR-GROWN IN1-XGAXP/GAAS STRUCTURES [J].

NUESE, CJ ;

ETTENBERG, M ;

OLSEN, GH .

APPLIED PHYSICS LETTERS, 1974, 25 (10) :612-614

[8] ROOM-TEMPERATURE HETEROJUNCTION LASER-DIODES OF INXGA1-XAS-INYGA1-YP WITH EMISSION WAVELENGTH BETWEEN 0.9 AND 1.15MU [J].

NUESE, CJ ;

OLSEN, GH .

APPLIED PHYSICS LETTERS, 1975, 26 (09) :528-531

[9]

NUESE CJ, TO BE PUBLISHED

← 1 →