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INTERFACIAL RECOMBINATION AT (ALGA)AS-GAAS HETEROJUNCTION STRUCTURES
被引:98
作者
:
ETTENBERG, M
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
RCA LABS DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
ETTENBERG, M
[
1
]
KRESSEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
RCA LABS DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
KRESSEL, H
[
1
]
机构
:
[1]
RCA LABS DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
来源
:
JOURNAL OF APPLIED PHYSICS
|
1976年
/ 47卷
/ 04期
关键词
:
D O I
:
10.1063/1.322821
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1538 / 1544
页数:7
相关论文
共 15 条
[1]
ALFEROV ZI, 1975, SOV PHYS SEMICOND+, V8, P1532
[2]
REFINED STEP-RECOVERY TECHNIQUE FOR MEASURING MINORITY CARRIER LIFETIMES AND RELATED PARAMETERS IN ASYMMETRIC P-N JUNCTION DIODES
DEAN, RH
论文数:
0
引用数:
0
h-index:
0
DEAN, RH
NUESE, CJ
论文数:
0
引用数:
0
h-index:
0
NUESE, CJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1971,
ED18
(03)
: 151
-
&
[3]
MINORITY-CARRIER DIFFUSION LENGTH AND RECOMBINATION LIFETIME IN GAAS-GE PREPARED BY LIQUID-PHASE EPITAXY
ETTENBERG, M
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
ETTENBERG, M
KRESSEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
KRESSEL, H
GILBERT, SL
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
GILBERT, SL
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(02)
: 827
-
831
[4]
THERMAL EXPANSION OF ALAS
ETTENBERG, M
论文数:
0
引用数:
0
h-index:
0
ETTENBERG, M
PAFF, RJ
论文数:
0
引用数:
0
h-index:
0
PAFF, RJ
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(10)
: 3926
-
+
[5]
VERY LOW-THRESHOLD DOUBLE-HETEROJUNCTION ALX GA1-X AS INJECTION LASERS
ETTENBERG, M
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
ETTENBERG, M
[J].
APPLIED PHYSICS LETTERS,
1975,
27
(12)
: 652
-
654
[6]
DELAY BETWEEN CURRENT PULSE + LIGHT EMISSION OF GALLIUM ARSENIDE INJECTION LASER ( RISE-TIME LESS THAN 0.2 NSEC 77 DEGREES K E )
KONNERTH, K
论文数:
0
引用数:
0
h-index:
0
KONNERTH, K
LANZA, C
论文数:
0
引用数:
0
h-index:
0
LANZA, C
[J].
APPLIED PHYSICS LETTERS,
1964,
4
(07)
: 120
-
&
[7]
GALLIUM-ARSENIDE AND (ALGA) AS DEVICES PREPARED BY LIQUID-PHASE EPITAXY (REVIEW ARTICLE)
KRESSEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
KRESSEL, H
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1974,
3
(04)
: 747
-
790
[8]
LOCKWOOD HF, 1974, J CRYST GROWTH, V27, P97
[9]
THIN SOLUTION MULTIPLE LAYER EPITAXY
LOCKWOOD, HF
论文数:
0
引用数:
0
h-index:
0
LOCKWOOD, HF
ETTENBERG, M
论文数:
0
引用数:
0
h-index:
0
ETTENBERG, M
[J].
JOURNAL OF CRYSTAL GROWTH,
1972,
15
(01)
: 81
-
+
[10]
Many A., 1965, SEMICONDUCTOR SURFAC
←
1
2
→
共 15 条
[1]
ALFEROV ZI, 1975, SOV PHYS SEMICOND+, V8, P1532
[2]
REFINED STEP-RECOVERY TECHNIQUE FOR MEASURING MINORITY CARRIER LIFETIMES AND RELATED PARAMETERS IN ASYMMETRIC P-N JUNCTION DIODES
DEAN, RH
论文数:
0
引用数:
0
h-index:
0
DEAN, RH
NUESE, CJ
论文数:
0
引用数:
0
h-index:
0
NUESE, CJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1971,
ED18
(03)
: 151
-
&
[3]
MINORITY-CARRIER DIFFUSION LENGTH AND RECOMBINATION LIFETIME IN GAAS-GE PREPARED BY LIQUID-PHASE EPITAXY
ETTENBERG, M
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
ETTENBERG, M
KRESSEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
KRESSEL, H
GILBERT, SL
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS, PRINCETON, NJ 08540 USA
RCA LABS, PRINCETON, NJ 08540 USA
GILBERT, SL
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(02)
: 827
-
831
[4]
THERMAL EXPANSION OF ALAS
ETTENBERG, M
论文数:
0
引用数:
0
h-index:
0
ETTENBERG, M
PAFF, RJ
论文数:
0
引用数:
0
h-index:
0
PAFF, RJ
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(10)
: 3926
-
+
[5]
VERY LOW-THRESHOLD DOUBLE-HETEROJUNCTION ALX GA1-X AS INJECTION LASERS
ETTENBERG, M
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
ETTENBERG, M
[J].
APPLIED PHYSICS LETTERS,
1975,
27
(12)
: 652
-
654
[6]
DELAY BETWEEN CURRENT PULSE + LIGHT EMISSION OF GALLIUM ARSENIDE INJECTION LASER ( RISE-TIME LESS THAN 0.2 NSEC 77 DEGREES K E )
KONNERTH, K
论文数:
0
引用数:
0
h-index:
0
KONNERTH, K
LANZA, C
论文数:
0
引用数:
0
h-index:
0
LANZA, C
[J].
APPLIED PHYSICS LETTERS,
1964,
4
(07)
: 120
-
&
[7]
GALLIUM-ARSENIDE AND (ALGA) AS DEVICES PREPARED BY LIQUID-PHASE EPITAXY (REVIEW ARTICLE)
KRESSEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
KRESSEL, H
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1974,
3
(04)
: 747
-
790
[8]
LOCKWOOD HF, 1974, J CRYST GROWTH, V27, P97
[9]
THIN SOLUTION MULTIPLE LAYER EPITAXY
LOCKWOOD, HF
论文数:
0
引用数:
0
h-index:
0
LOCKWOOD, HF
ETTENBERG, M
论文数:
0
引用数:
0
h-index:
0
ETTENBERG, M
[J].
JOURNAL OF CRYSTAL GROWTH,
1972,
15
(01)
: 81
-
+
[10]
Many A., 1965, SEMICONDUCTOR SURFAC
←
1
2
→