VERY LOW-THRESHOLD DOUBLE-HETEROJUNCTION ALX GA1-X AS INJECTION LASERS

被引：22

作者：

ETTENBERG, M ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 12期

关键词：

D O I：

10.1063/1.88351

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：652 / 654

页数：3

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共 11 条

[1] THERMAL-CONDUCTIVITY OF GA1-XALXAS ALLOYS
AFROMOWITZ, MA
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1292 - 1294
[2] [Anonymous], COMMUNICATION, P2490
[3] THRESHOLD REDUCTION BY ADDITION OF PHOSPHORUS TO TERNARY LAYERS OF DOUBLE-HETEROSTRUCTURE GAAS LASERS
DYMENT, JC
NASH, FR
HWANG, CJ
ROZGONYI, GA
HARTMAN, RL
MARCOS, HM
HASZKO, SE
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (10) : 481 - 484
[4] ETTENBERG M, 1975, 17TH AIME C PREP PRO
[5] KRESSEL H, 1972, LASER HDB
[6] LOCKWOOD HF, 1974, J CRYST GROWTH, V27, P97
[7] THIN SOLUTION MULTIPLE LAYER EPITAXY
LOCKWOOD, HF
ETTENBERG, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 15 (01) : 81 - +
[8] PANISH MB, 1974, APPLIED SOLID STATE, V4
[9] TE AND GE - DOPING STUDIES IN GA1-XA1XAS
SPRINGTHORPE, AJ
KING, FD
BECKE, A
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) : 101 - 118
[10] LOW THRESHOLD-CURRENT DENSITY IN 5-LAYER-HETEROSTRUCTURE (GAAL)AS/GAAS LOCALIZED-GAIN-REGION INJECTION LASERS
THOMPSON, GH
KIRKBY, PA
[J]. ELECTRONICS LETTERS, 1973, 9 (13) : 295 - 296