TE AND GE - DOPING STUDIES IN GA1-XA1XAS

被引：136

作者：

SPRINGTHORPE, AJ ^{[1
]}

KING, FD ^{[1
]}

BECKE, A ^{[1
]}

机构：

[1] BELL TEL CANADA NO RES,POB 3511 STN C,OTTAWA K1Y 4H7,ONTARIO,CANADA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1975年 / 4卷 / 01期

关键词：

D O I：

10.1007/BF02657839

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：101 / 118

页数：18

共 24 条

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STILLMAN, GE ;

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[5]

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[7]

HESS E, 1973, PHYS STATUS SOLIDI B, V55, P187, DOI [10.1002/pssb.2220560254, 10.1002/pssb.2220550118]

[8] EFFECT OF DONOR IMPURITIES ON DIRECT-INDIRECT TRANSITION IN GA(AS1-XPX) - (S SE AND TE DOPING - EFFECT ON JUNCTION LASER WAVELENGTH - E/T) [J].

HOLONYAK, N ;

NUESE, CJ ;

SIRKIS, MD ;

STILLMAN, GE .

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[9] HALL EFFECT STUDIES OF DOPED ZINC OXIDE SINGLE CRYSTALS [J].

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[10]

ILEGEMS M, 1969, 2 P INT S GAAS, P3

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