LOW THRESHOLD-CURRENT DENSITY IN 5-LAYER-HETEROSTRUCTURE (GAAL)AS/GAAS LOCALIZED-GAIN-REGION INJECTION LASERS

被引：26

作者：

THOMPSON, GH ^{[1
]}

KIRKBY, PA ^{[1
]}

机构：

[1] STAND TELECOMMUN LABS LTD,HARLOW,ESSEX,ENGLAND

来源：

ELECTRONICS LETTERS | 1973年 / 9卷 / 13期

关键词：

D O I：

10.1049/el:19730214

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：295 / 296

页数：2

共 10 条

[1]

ALFEROV ZI, 1970, SOV PHYS SEMICOND, V3, P1107

[2] JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE [J].

HAYASHI, I ;

PANISH, MB ;

FOY, PW ;

SUMSKI, S .

APPLIED PHYSICS LETTERS, 1970, 17 (03) :109-&

[3]

KIRKBY P, TO BE PUBLISHED

[4]

KRESSEL H, 1971, RCA REV, V32, P393

[5] DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/CM2 [J].

PANISH, MB ;

HAYASHI, I ;

SUMSKI, S .

APPLIED PHYSICS LETTERS, 1970, 16 (08) :326-&

[6] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASERS-EFFECT OF DOPING ON LASING CHARACTERISTICS OF GAAS [J].

PINKAS, E ;

HAYASHI, I ;

MILLER, BI ;

FOY, PW .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2827-&

[7] CONTINUOUS OPERATION OF JUNCTION LASERS AT ROOM TEMPERATURE [J].

SAKUMA, I ;

YONEZU, H ;

NISHIDA, K ;

KOBAYASHI, K ;

SAITO, F ;

NANNICHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (02) :282-+

[8] PROPERTIES OF DOUBLE HETEROSTRUCTURE LASERS WITH VERY NARROW ACTIVE REGIONS [J].

SELWAY, PR ;

GOODWIN, AR .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (05) :904-+

[9]

THOMPSON GHB, 1970, Patent No. 1263835

[10]

THOMPSON GHB, 1973, J QUANT ELECTRON, VQE 9, P311

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