GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASERS-EFFECT OF DOPING ON LASING CHARACTERISTICS OF GAAS

被引：101

作者：

PINKAS, E

HAYASHI, I

MILLER, BI

FOY, PW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 06期

关键词：

D O I：

10.1063/1.1661602

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2827 / &

相关论文

共 24 条

[1] Alferov Zh. I., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P1826
[2] BIARD JR, 1964, T METALL SOC AIME, V230, P286
[3] LASER TRANSITION AND WAVELENGTH LIMITS OF GAAS
DAPKUS, PD
HOLONYAK, N
ROSSI, JA
WILLIAMS, FV
HIGH, DA
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3300 - &
[4] SPONTANEOUS AND STIMULATED CARRIER LIFETIME (77 DEGREES K) IN A HIGH-PURITY, SURFACE-FREE GAAS EPITAXIAL LAYER
DAPKUS, PD
HOLONYAK, N
BURNHAM, RD
KEUNE, DL
BURD, JW
LAWLEY, KL
WALLINE, RE
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 4194 - +
[5] MEASUREMENT AND INTERPRETATION OF LONG SPONTANEOUS LIFETIMES IN DOUBLE HETEROSTRUCTURE LASERS
DYMENT, JC
LEE, TP
RIPPER, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) : 452 - +
[6] CONTINUOUS OPERATION OF GAAS JUNCTION LASERS ON DIAMOND HEAT SINKS AT 200 DEGREES K
DYMENT, JC
DASARO, LA
[J]. APPLIED PHYSICS LETTERS, 1967, 11 (09) : 292 - &
[7] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS
HAYASHI, I
PANISH, MB
REINHART, FK
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 1929 - &
[8] GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE
HAYASHI, I
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 150 - &
[9] JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
HAYASHI, I
PANISH, MB
FOY, PW
SUMSKI, S
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (03) : 109 - &
[10] HAYASHI I, 1968, IEEE J QUANT ELECTRO, VQE 4, P113