LOW-THRESHOLD DOUBLE HETEROJUNCTION ALGAAS-GAAS LASER-DIODES - THEORY AND EXPERIMENT

被引：68

作者：

KRESSEL, H ^{[1
]}

ETTENBERG, M ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 08期

关键词：

D O I：

10.1063/1.323150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3533 / 3537

页数：5

相关论文

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[9] LASING TRANSITIONS IN P+-N-N+(ALGA)AS-GAAS HETEROJUNCTION LASERS
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[10] MEASUREMENTS OF REFRACTIVE-INDEX STEP AND OF CARRIER CONFINEMENT AT (AIGA) AS-GAAS HETEROJUNCTIONS
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