LASING TRANSITIONS IN P+-N-N+(ALGA)AS-GAAS HETEROJUNCTION LASERS

被引：14

作者：

KRESSEL, H

LOCKWOOD, HF

机构：

来源：

关键词：

D O I：

10.1063/1.1654098

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：175 / &

共 15 条

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[3] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS
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[4] CONTROL OF OPTICAL LOSSES IN P-N JUNCTION LASERS BY USE OF A HETEROJUNCTION - THEORY AND EXPERIMENT
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NELSON, H
HAWRYLO, FZ
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) : 2019 - +
[5] KRESSEL H, 1971, LASERS, V3
[6] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS
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STERN, F
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A): : A553 - &
[7] LOCKWOOD HF, TO BE PUBLISHED
[8] RECOMBINATION RADIATION IN GAAS
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[J]. PHYSICAL REVIEW, 1963, 129 (01): : 125 - &
[9] PANKOVE JI, 1968, IEEE J QUANTUM ELECT, VQE 4, P119
[10] SPONTANEOUS AND STIMULATED EMISSION FROM GAAS DIODES WITH 3-LAYER STRUCTURES
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[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) : 3621 - +