SPONTANEOUS AND STIMULATED EMISSION FROM GAAS DIODES WITH 3-LAYER STRUCTURES

被引：10

作者：

PILKUHN, M

RUPPRECHT, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1966年 / 37卷 / 09期

关键词：

D O I：

10.1063/1.1708915

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3621 / +

页数：1

相关论文

共 39 条

[1] DOUBLE INJECTION IN DEEP-LYING IMPURITY SEMICONDUCTORS
ASHLEY, KL
MILNES, AG
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 369 - &
[2] P-N JUNCTION LASERS
BURNS, G
NATHAN, MI
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 770 - +
[3] EFFECT OF TEMPERATURE ON PROPERTIES OF GAAS LASER
BURNS, G
DILL, FH
NATHAN, MI
[J]. PROCEEDINGS OF THE IEEE, 1963, 51 (06) : 947 - &
[4] CARLSON RO, 1965, B AM PHYS SOC, V10, P607
[5] IDENTIFICATION OF LASER TRANSITIONS IN ELECTRON-BEAM-PUMPED GAAS (RECOMBINATION RADIATION FAST ELECTRON BEAM PUMPING IMPURITY EFFECTS E)
CUSANO, DA
[J]. APPLIED PHYSICS LETTERS, 1965, 7 (06) : 151 - &
[6] TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T )
DOUSMANIS, GC
STAEBLER, DL
NELSON, H
[J]. APPLIED PHYSICS LETTERS, 1964, 5 (09) : 174 - &
[7] OPTICAL TRANSITIONS INVOLVING IMPURITIES IN SEMICONDUCTORS
DUMKE, WP
[J]. PHYSICAL REVIEW, 1963, 132 (05): : 1998 - &
[8] DUMKE WP, 1964, 7 P INT C PHYS SEM, P611
[9] INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE
HILL, DE
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A): : A866 - &
[10] DOUBLE INJECTION WITH NEGATIVE RESISTANCE IN SEMI-INSULATORS
HOLONYAK, N
BEVACQUA, SF
THOMAS, RC
ING, SW
[J]. PHYSICAL REVIEW LETTERS, 1962, 8 (11) : 426 - &

← 1 2 3 4 →