CRYSTALLOGRAPHIC SLIP IN GAAS WAFERS ANNEALED USING INCOHERENT RADIATION

被引：28

作者：

BLUNT, RT

LAMB, MSM

SZWEDA, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 03期

关键词：

D O I：

10.1063/1.96200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：304 / 306

页数：3

共 9 条

[1] HALOGEN LAMP ANNEALING OF GAAS FOR MESFET FABRICATION [J].

BADAWI, MH ;

MUN, J .

ELECTRONICS LETTERS, 1984, 20 (03) :125-126

[2] DEFECTS INTRODUCED IN SILICON-WAFERS DURING RAPID ISOTHERMAL ANNEALING - THERMOELASTIC AND THERMOPLASTIC EFFECTS [J].

BENTINI, G ;

CORRERA, L ;

DONOLATO, C .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2922-2929

[3] ANNEALING OF MG IMPLANTS IN GAAS USING INCOHERENT RADIATION [J].

BLUNT, RT ;

SZWEDA, R ;

LAMB, MSM ;

CULLIS, AG .

ELECTRONICS LETTERS, 1984, 20 (11) :444-446

[4] INCOHERENT ANNEALING OF IMPLANTED LAYERS IN GAAS [J].

DAVIES, DE ;

MCNALLY, PJ ;

LORENZO, JP ;

JULIAN, M .

ELECTRON DEVICE LETTERS, 1982, 3 (04) :102-103

[5]

ITO K, 1983, JPN J APPL PHYS, V22, P299

[6]

KOZHU H, 1983, J APPL PHYS, V54, P4998

[7] RADIATION ANNEALING OF BORON-IMPLANTED SILICON WITH A HALOGEN LAMP [J].

NISHIYAMA, K ;

ARAI, M ;

WATANABE, N .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L563-L566

[8] ANNEALING EFFECTS IN SILICON-NITRIDE ENCAPSULANT FILMS [J].

SZWEDA, R .

PHYSICA B & C, 1985, 129 (1-3) :435-439

[9] RAPID THERMAL ANNEALING OF BE, SI, AND ZN IMPLANTED GAAS USING AN ULTRAHIGH POWER ARGON ARC LAMP [J].

TABATABAIEALAVI, K ;

CHOUDHURY, ANMM ;

FONSTAD, CG ;

GELPEY, JC .

APPLIED PHYSICS LETTERS, 1983, 43 (05) :505-507

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