HALOGEN LAMP ANNEALING OF GAAS FOR MESFET FABRICATION

被引：16

作者：

BADAWI, MH

MUN, J

机构：

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 03期

关键词：

D O I：

10.1049/el:19840084

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：125 / 126

页数：2

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共 9 条

[1] RADIATION ANNEALING OF GAAS IMPLANTED WITH SI
ARAI, M
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WATANABE, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) : L124 - L126
[2] SELECTIVE IMPLANTATION OF GAAS FOR MESFET APPLICATIONS
BADAWI, MH
DUNBOBBIN, DR
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[J]. ELECTRONICS LETTERS, 1983, 19 (15) : 598 - 600
[3] ANNEALING OF ION-IMPLANTED SILICON BY AN INCOHERENT-LIGHT PULSE
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KRONENBERG, S
LUX, R
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (11) : 955 - 957
[4] INCOHERENT ANNEALING OF IMPLANTED LAYERS IN GAAS
DAVIES, DE
MCNALLY, PJ
LORENZO, JP
JULIAN, M
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (04): : 102 - 103
[5] RADIATION ANNEALING OF SI-IMPLANTED AND S-IMPLANTED GAAS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (05): : L299 - L300
[6] INFRARED RAPID THERMAL ANNEALING FOR GAAS DEVICE FABRICATION
KOHZU, H
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TAKAYAMA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 4998 - 5003
[7] INFRARED RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS
KUZUHARA, M
KOHZU, H
TAKAYAMA, Y
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 755 - 758
[8] RADIATION ANNEALING OF BORON-IMPLANTED SILICON WITH A HALOGEN LAMP
NISHIYAMA, K
ARAI, M
WATANABE, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L563 - L566
[9] ACTIVATION OF ARSENIC-IMPLANTED SILICON USING AN INCOHERENT-LIGHT SOURCE
POWELL, RA
YEP, TO
FULKS, RT
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (02) : 150 - 152