INFRARED RAPID THERMAL ANNEALING FOR GAAS DEVICE FABRICATION

被引：34

作者：

KOHZU, H

KUZUHARA, M

TAKAYAMA, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.332767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4998 / 5003

页数：6

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