ELECTRICAL-PROPERTIES OF S-IMPLANTS IN GAAS ACTIVATED BY INFRARED RAPID THERMAL ANNEALING

被引：22

作者：

KUZUHARA, M

KOHZU, H

TAKAYAMA, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 06期

关键词：

D O I：

10.1063/1.332467

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3121 / 3124

页数：4

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[8] CORRELATION OF ELECTRICAL CARRIER AND ATOMIC PROFILES OF S-IMPLANTS IN GAAS
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