CORRELATION OF ELECTRICAL CARRIER AND ATOMIC PROFILES OF S-IMPLANTS IN GAAS

被引：14

作者：

YEO, YK

PARK, YS

KWOR, R

机构：

[1] USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433

[2] UNIV NOTRE DAME,DEPT ELECT ENGN,NOTRE DAME,IN 46556

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 03期

关键词：

D O I：

10.1063/1.330594

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1815 / 1817

页数：3

共 8 条

[1] ROLE OF ELEVATED-TEMPERATURES IN IMPLANTATION OF GAAS [J].

DAVIES, DE ;

ROOSILD, S ;

LOWE, L .

SOLID-STATE ELECTRONICS, 1975, 18 (09) :733-736

[2]

DONNELLY JP, 1977, I PHYS C SER B, V33, P166

[3]

EISEN FH, 1977, ION IMPLANTATION SEM, P97

[4]

EISEN FH, 1975, ION IMPLANTATION SEM, P3

[5] ION-IMPLANTED SE IN GAAS [J].

LIDOW, A ;

GIBBONS, JF ;

DELINE, VR ;

EVANS, CA .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4130-4138

[6] FAST DIFFUSION OF ELEVATED-TEMPERATURE ION-IMPLANTED SE IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY [J].

LIDOW, A ;

GIBBONS, JF ;

DELINE, VR ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :149-151

[7] SOLID SOLUBILITY OF SELENIUM IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY [J].

LIDOW, A ;

GIBBONS, JF ;

DELINE, VR ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 32 (09) :572-573

[8] CHROMIUM REDISTRIBUTION DURING THERMAL ANNEALING OF SEMI-INSULATING GAAS AS A FUNCTION OF ENCAPSULANT AND IMPLANT FLUENCE [J].

VASUDEV, PK ;

WILSON, RG ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1980, 36 (10) :837-840

← 1 →