ION-IMPLANTED SE IN GAAS

被引：16

作者：

LIDOW, A

GIBBONS, JF

DELINE, VR

EVANS, CA

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[3] UNIV ILLINOIS,SCH CHEM SCI,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 08期

关键词：

D O I：

10.1063/1.328232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4130 / 4138

页数：9

共 23 条

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[2]

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[4]

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[6]

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[7]

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[8] FAST DIFFUSION OF ELEVATED-TEMPERATURE ION-IMPLANTED SE IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY [J].

LIDOW, A ;

GIBBONS, JF ;

DELINE, VR ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :149-151

[9] ION-IMPLANTED SELENIUM PROFILES IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY [J].

LIDOW, A ;

GIBBONS, JF ;

DELINE, VR ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 32 (01) :15-17

[10] DOUBLE-LAYERED ENCAPSULANT FOR ANNEALING ION-IMPLANTED GAAS UP TO 1100DEGREESC [J].

LIDOW, A ;

GIBBONS, JF ;

MAGEE, T .

APPLIED PHYSICS LETTERS, 1977, 31 (03) :158-161

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