ELECTRICAL-PROPERTIES AND DISTRIBUTION OF SULFUR IMPLANTS IN GAAS

[1] ROLE OF ELEVATED-TEMPERATURES IN IMPLANTATION OF GAAS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (09) : 733 - 736

[2] DONNELLY JP, 1977, I PHYS C SER B, V33, P166

[3] Eisen F. H., 1976, Applications of ion beams to materials 1975, P64

[4] EISEN FH, 1977, ION IMPLANTATION SEM, P97

[5] EISEN FH, 1975, ION IMPLANTATION SEM, P3

[6] Evans C. A. Jr., 1980, Semi-Insulating III-V Materials, P138

[7] FUJIMOTO M, 1977, ION IMPLANTATION SEM, P89

[8] Hunsperger R. G., 1970, Radiation Effects, V6, P263, DOI 10.1080/00337577008236305

[9] CAPLESS ANNEAL OF ION-IMPLANTED GAAS IN CONTROLLED ARSENIC VAPOR [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 541 - 543

[10] SOLID SOLUBILITY OF SELENIUM IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY [J]. APPLIED PHYSICS LETTERS, 1978, 32 (09) : 572 - 573

[1] ROLE OF ELEVATED-TEMPERATURES IN IMPLANTATION OF GAAS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (09) : 733 - 736

[2] DONNELLY JP, 1977, I PHYS C SER B, V33, P166

[3] Eisen F. H., 1976, Applications of ion beams to materials 1975, P64

[4] EISEN FH, 1977, ION IMPLANTATION SEM, P97

[5] EISEN FH, 1975, ION IMPLANTATION SEM, P3

[6] Evans C. A. Jr., 1980, Semi-Insulating III-V Materials, P138

[7] FUJIMOTO M, 1977, ION IMPLANTATION SEM, P89

[8] Hunsperger R. G., 1970, Radiation Effects, V6, P263, DOI 10.1080/00337577008236305

[9] CAPLESS ANNEAL OF ION-IMPLANTED GAAS IN CONTROLLED ARSENIC VAPOR [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 541 - 543

[10] SOLID SOLUBILITY OF SELENIUM IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY [J]. APPLIED PHYSICS LETTERS, 1978, 32 (09) : 572 - 573