ELECTRICAL-PROPERTIES AND DISTRIBUTION OF SULFUR IMPLANTS IN GAAS

[11] MUELLER H, 1975, ION IMPLANTATION SEM, P19

[12] Sansbury J. D., 1970, Radiation Effects, V6, P269, DOI 10.1080/00337577008236306

[13] CHROMIUM REDISTRIBUTION DURING THERMAL ANNEALING OF SEMI-INSULATING GAAS AS A FUNCTION OF ENCAPSULANT AND IMPLANT FLUENCE [J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 837 - 840

[14] DEPENDENCE OF IMPLANTED SE AND S PROFILES ON GAAS IMPLANTATION TEMPERATURE AND CRYSTALLINITY [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 715 - 717

[15] ELECTRICAL AND CATHODOLUMINESCENCE MEASUREMENTS ON ION-IMPLANTED DONOR LAYERS IN GAAS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (03) : 267 - 275

[16] ION ENERGY-DEPENDENT ELECTRICAL-PROPERTIES OF SULFUR IMPLANTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1812 - 1814

[17] CORRELATION OF ELECTRICAL CARRIER AND ATOMIC PROFILES OF S-IMPLANTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1815 - 1817

[11] MUELLER H, 1975, ION IMPLANTATION SEM, P19

[12] Sansbury J. D., 1970, Radiation Effects, V6, P269, DOI 10.1080/00337577008236306

[13] CHROMIUM REDISTRIBUTION DURING THERMAL ANNEALING OF SEMI-INSULATING GAAS AS A FUNCTION OF ENCAPSULANT AND IMPLANT FLUENCE [J]. APPLIED PHYSICS LETTERS, 1980, 36 (10) : 837 - 840

[14] DEPENDENCE OF IMPLANTED SE AND S PROFILES ON GAAS IMPLANTATION TEMPERATURE AND CRYSTALLINITY [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 715 - 717

[15] ELECTRICAL AND CATHODOLUMINESCENCE MEASUREMENTS ON ION-IMPLANTED DONOR LAYERS IN GAAS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (03) : 267 - 275

[16] ION ENERGY-DEPENDENT ELECTRICAL-PROPERTIES OF SULFUR IMPLANTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1812 - 1814

[17] CORRELATION OF ELECTRICAL CARRIER AND ATOMIC PROFILES OF S-IMPLANTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1815 - 1817