ION ENERGY-DEPENDENT ELECTRICAL-PROPERTIES OF SULFUR IMPLANTS IN GAAS

被引：10

作者：

YEO, YK

KWOR, R

PARK, YS

机构：

[1] UNIV NOTRE DAME,DEPT ELECT ENGN,NOTRE DAME,IN 46556

[2] USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

关键词：

D O I：

10.1063/1.330593

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1812 / 1814

页数：3

共 6 条

[1] ROLE OF ELEVATED-TEMPERATURES IN IMPLANTATION OF GAAS
DAVIES, DE
ROOSILD, S
LOWE, L
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (09) : 733 - 736
[2] EISEN FH, 1977, ION IMPLANTATION SEM, P97
[3] FUJIMOTO M, 1977, ION IMPLANTATION SEM, P89
[4] MUELLER H, 1975, ION IMPLANTATION SEM, P19
[5] Sansbury J. D., 1970, Radiation Effects, V6, P269, DOI 10.1080/00337577008236306
[6] ELECTRICAL AND CATHODOLUMINESCENCE MEASUREMENTS ON ION-IMPLANTED DONOR LAYERS IN GAAS
WOODCOCK, JM
SHANNON, JM
CLARK, DJ
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (03) : 267 - 275