HIGH-PERFORMANCE ION-IMPLANTED LOW-NOISE GAAS-MESFETS

被引:7
作者
FENG, M
EU, VK
KANBER, H
HACKETT, R
机构
来源
ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 11期
关键词
D O I
10.1109/EDL.1982.25589
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:327 / 329
页数:3
相关论文
共 9 条
  • [1] LOW-NOISE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR MADE BY ION-IMPLANTATION
    FENG, M
    EU, VK
    KANBER, H
    WATKINS, E
    SCHELLENBERG, JM
    YAMASAKI, H
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (09) : 802 - 804
  • [2] SILICON IMPLANTED SUPER LOW-NOISE GAAS-MESFET
    FENG, M
    EU, VK
    SIRACUSA, M
    WATKINS, E
    [J]. ELECTRONICS LETTERS, 1982, 18 (01) : 21 - 23
  • [3] OPTIMAL NOISE-FIGURE OF MICROWAVE GAAS-MESFETS
    FUKUI, H
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) : 1032 - 1037
  • [4] LOW-NOISE GAAS FETS PREPARED BY ION-IMPLANTATION
    HIGGINS, JA
    KUVAS, RL
    EISEN, FH
    CHEN, DR
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 587 - 596
  • [5] HUANG C, 1981, IEEE MTFS INT MICROW, P25
  • [6] Kamei K., 1980, International Electron Devices Meeting. Technical Digest, P102
  • [7] SUPER LOW-NOISE GAAS-MESFETS WITH A DEEP-RECESS STRUCTURE
    OHATA, K
    ITOH, H
    HASEGAWA, F
    FUJIKI, Y
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1029 - 1034
  • [8] SUZUKI T, 1980, IEEE T MICROW THEORY, P367
  • [9] Yamasaki H., 1980, International Electron Devices Meeting. Technical Digest, P106