HIGH-PERFORMANCE ION-IMPLANTED LOW-NOISE GAAS-MESFETS

被引：7

作者：

FENG, M

EU, VK

KANBER, H

HACKETT, R

机构：

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 11期

关键词：

D O I：

10.1109/EDL.1982.25589

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：327 / 329

页数：3

共 9 条

[1] LOW-NOISE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR MADE BY ION-IMPLANTATION
FENG, M
EU, VK
KANBER, H
WATKINS, E
SCHELLENBERG, JM
YAMASAKI, H
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (09) : 802 - 804
[2] SILICON IMPLANTED SUPER LOW-NOISE GAAS-MESFET
FENG, M
EU, VK
SIRACUSA, M
WATKINS, E
[J]. ELECTRONICS LETTERS, 1982, 18 (01) : 21 - 23
[3] OPTIMAL NOISE-FIGURE OF MICROWAVE GAAS-MESFETS
FUKUI, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) : 1032 - 1037
[4] LOW-NOISE GAAS FETS PREPARED BY ION-IMPLANTATION
HIGGINS, JA
KUVAS, RL
EISEN, FH
CHEN, DR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 587 - 596
[5] HUANG C, 1981, IEEE MTFS INT MICROW, P25
[6] Kamei K., 1980, International Electron Devices Meeting. Technical Digest, P102
[7] SUPER LOW-NOISE GAAS-MESFETS WITH A DEEP-RECESS STRUCTURE
OHATA, K
ITOH, H
HASEGAWA, F
FUJIKI, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1029 - 1034
[8] SUZUKI T, 1980, IEEE T MICROW THEORY, P367
[9] Yamasaki H., 1980, International Electron Devices Meeting. Technical Digest, P106