LOW-NOISE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR MADE BY ION-IMPLANTATION

被引：13

作者：

FENG, M

EU, VK

KANBER, H

WATKINS, E

SCHELLENBERG, JM

YAMASAKI, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 09期

关键词：

D O I：

10.1063/1.93265

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：802 / 804

页数：3

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