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LOW-NOISE GAAS FIELD-EFFECT TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY
被引:5
作者
:
OMORI, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
OMORI, M
DRUMMOND, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
DRUMMOND, TJ
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
MORKOC, H
机构
:
[1]
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
[2]
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源
:
APPLIED PHYSICS LETTERS
|
1981年
/ 39卷
/ 07期
关键词
:
D O I
:
10.1063/1.92796
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:566 / 569
页数:4
相关论文
共 18 条
[1]
LOW-NOISE MICROWAVE FETS FABRICATED BY MOLECULAR-BEAM EPITAXY
BANDY, SG
论文数:
0
引用数:
0
h-index:
0
机构:
Corporate Solid State Laboratory, Varian Associates Inc., Palo Alto
BANDY, SG
COLLINS, DM
论文数:
0
引用数:
0
h-index:
0
机构:
Corporate Solid State Laboratory, Varian Associates Inc., Palo Alto
COLLINS, DM
NISHIMOTO, CK
论文数:
0
引用数:
0
h-index:
0
机构:
Corporate Solid State Laboratory, Varian Associates Inc., Palo Alto
NISHIMOTO, CK
[J].
ELECTRONICS LETTERS,
1979,
15
(08)
: 218
-
219
[2]
NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY
BARNES, PA
论文数:
0
引用数:
0
h-index:
0
BARNES, PA
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(07)
: 651
-
653
[3]
SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
DERNIER, PD
论文数:
0
引用数:
0
h-index:
0
DERNIER, PD
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(06)
: 3328
-
3332
[4]
GAAS MESFET PREPARED BY MOLECULAR-BEAM EPITAXY (MBE)
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LAB INC,MURRAY HILL,NJ 07974
CHO, AY
CHEN, DR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LAB INC,MURRAY HILL,NJ 07974
CHEN, DR
[J].
APPLIED PHYSICS LETTERS,
1976,
28
(01)
: 30
-
31
[5]
CHO AY, 1971, J VAC SCI TECHNOL, V8, P531
[6]
CHO AY, 1975, PROGR SOLID STATE CH, V10
[7]
COOKE HF, 1978, WORKSHOP COMPOUND SE
[8]
NON-ALLOYED AND INSITU OHMIC CONTACTS TO HIGHLY DOPED N-TYPE GAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY (MBE) FOR FIELD-EFFECT TRANSISTORS
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
DILORENZO, JV
NIEHAUS, WC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
NIEHAUS, WC
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
CHO, AY
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(02)
: 951
-
954
[9]
HOOPER WW, 1977, IEEE INT ELECTRON DE, P601
[10]
IMPROVED GAAS MESFET WITH A THIN INSITU BUFFER GROWN BY LIQUID-PHASE EPITAXY
KIM, CK
论文数:
0
引用数:
0
h-index:
0
KIM, CK
MALBON, RM
论文数:
0
引用数:
0
h-index:
0
MALBON, RM
OMORI, M
论文数:
0
引用数:
0
h-index:
0
OMORI, M
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(01)
: 92
-
94
←
1
2
→
共 18 条
[1]
LOW-NOISE MICROWAVE FETS FABRICATED BY MOLECULAR-BEAM EPITAXY
BANDY, SG
论文数:
0
引用数:
0
h-index:
0
机构:
Corporate Solid State Laboratory, Varian Associates Inc., Palo Alto
BANDY, SG
COLLINS, DM
论文数:
0
引用数:
0
h-index:
0
机构:
Corporate Solid State Laboratory, Varian Associates Inc., Palo Alto
COLLINS, DM
NISHIMOTO, CK
论文数:
0
引用数:
0
h-index:
0
机构:
Corporate Solid State Laboratory, Varian Associates Inc., Palo Alto
NISHIMOTO, CK
[J].
ELECTRONICS LETTERS,
1979,
15
(08)
: 218
-
219
[2]
NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY
BARNES, PA
论文数:
0
引用数:
0
h-index:
0
BARNES, PA
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(07)
: 651
-
653
[3]
SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
DERNIER, PD
论文数:
0
引用数:
0
h-index:
0
DERNIER, PD
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(06)
: 3328
-
3332
[4]
GAAS MESFET PREPARED BY MOLECULAR-BEAM EPITAXY (MBE)
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LAB INC,MURRAY HILL,NJ 07974
CHO, AY
CHEN, DR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LAB INC,MURRAY HILL,NJ 07974
CHEN, DR
[J].
APPLIED PHYSICS LETTERS,
1976,
28
(01)
: 30
-
31
[5]
CHO AY, 1971, J VAC SCI TECHNOL, V8, P531
[6]
CHO AY, 1975, PROGR SOLID STATE CH, V10
[7]
COOKE HF, 1978, WORKSHOP COMPOUND SE
[8]
NON-ALLOYED AND INSITU OHMIC CONTACTS TO HIGHLY DOPED N-TYPE GAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY (MBE) FOR FIELD-EFFECT TRANSISTORS
DILORENZO, JV
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
DILORENZO, JV
NIEHAUS, WC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
NIEHAUS, WC
CHO, AY
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
CHO, AY
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(02)
: 951
-
954
[9]
HOOPER WW, 1977, IEEE INT ELECTRON DE, P601
[10]
IMPROVED GAAS MESFET WITH A THIN INSITU BUFFER GROWN BY LIQUID-PHASE EPITAXY
KIM, CK
论文数:
0
引用数:
0
h-index:
0
KIM, CK
MALBON, RM
论文数:
0
引用数:
0
h-index:
0
MALBON, RM
OMORI, M
论文数:
0
引用数:
0
h-index:
0
OMORI, M
[J].
APPLIED PHYSICS LETTERS,
1978,
33
(01)
: 92
-
94
←
1
2
→