LOW-NOISE GAAS FIELD-EFFECT TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY

被引：5

作者：

OMORI, M

DRUMMOND, TJ

MORKOC, H

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 07期

关键词：

D O I：

10.1063/1.92796

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：566 / 569

页数：4

相关论文

共 18 条

[1] LOW-NOISE MICROWAVE FETS FABRICATED BY MOLECULAR-BEAM EPITAXY
BANDY, SG
COLLINS, DM
NISHIMOTO, CK
[J]. ELECTRONICS LETTERS, 1979, 15 (08) : 218 - 219
[2] NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY
BARNES, PA
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 651 - 653
[3] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS
CHO, AY
DERNIER, PD
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3328 - 3332
[4] GAAS MESFET PREPARED BY MOLECULAR-BEAM EPITAXY (MBE)
CHO, AY
CHEN, DR
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (01) : 30 - 31
[5] CHO AY, 1971, J VAC SCI TECHNOL, V8, P531
[6] CHO AY, 1975, PROGR SOLID STATE CH, V10
[7] COOKE HF, 1978, WORKSHOP COMPOUND SE
[8] NON-ALLOYED AND INSITU OHMIC CONTACTS TO HIGHLY DOPED N-TYPE GAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY (MBE) FOR FIELD-EFFECT TRANSISTORS
DILORENZO, JV
NIEHAUS, WC
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 951 - 954
[9] HOOPER WW, 1977, IEEE INT ELECTRON DE, P601
[10] IMPROVED GAAS MESFET WITH A THIN INSITU BUFFER GROWN BY LIQUID-PHASE EPITAXY
KIM, CK
MALBON, RM
OMORI, M
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 92 - 94