RADIATION ANNEALING OF SI-IMPLANTED AND S-IMPLANTED GAAS

[1] RADIATION ANNEALING OF GAAS IMPLANTED WITH SI [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) : L124 - L126

[2] INFRARED RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 755 - 758

[3] KUZUHARA M, 1982, 1982 INT EL DEV M, P170

[4] NAKAI Y, 1969, TOSHIBA REV, V24, P721

[5] ION ENERGY-DEPENDENT ELECTRICAL-PROPERTIES OF SULFUR IMPLANTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1812 - 1814

[1] RADIATION ANNEALING OF GAAS IMPLANTED WITH SI [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) : L124 - L126

[2] INFRARED RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 755 - 758

[3] KUZUHARA M, 1982, 1982 INT EL DEV M, P170

[4] NAKAI Y, 1969, TOSHIBA REV, V24, P721

[5] ION ENERGY-DEPENDENT ELECTRICAL-PROPERTIES OF SULFUR IMPLANTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1812 - 1814