SELECTIVE IMPLANTATION OF GAAS FOR MESFET APPLICATIONS

被引：2

作者：

BADAWI, MH

DUNBOBBIN, DR

MUN, J

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 15期

关键词：

D O I：

10.1049/el:19830408

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：598 / 600

页数：3

共 6 条

[1] A SINGLE STEP SELECTIVE IMPLANTATION TECHNOLOGY FOR MULTIPLY DOPED LAYERS USING PROXIMITY ANNEALING [J].

DUNCAN, WM ;

WILLIAMS, RE .

ELECTRON DEVICE LETTERS, 1981, 2 (12) :309-311

[2] ION-IMPLANTED E/D-TYPE GAAS IC TECHNOLOGY [J].

FURUTSUKA, T ;

TSUJI, T ;

KATANO, F ;

HIGASHISAKA, A ;

KURUMADA, K .

ELECTRONICS LETTERS, 1981, 17 (25-2) :944-945

[3] SEMI-SEALING CAPLESS ANNEAL OF GAAS [J].

KASAHARA, J ;

WATANABE, N .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :L679-L682

[4] IMPROVED NOISE PERFORMANCE OF GAAS MESFETS WITH SELECTIVELY ION-IMPLANTED N+ SOURCE REGIONS [J].

OHATA, K ;

NOZAKI, T ;

KAWAMURA, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (08) :1129-1130

[5] LSI PROCESSING TECHNOLOGY FOR PLANAR GAAS INTEGRATED-CIRCUITS [J].

WELCH, BM ;

SHEN, Y ;

ZUCCA, R ;

EDEN, RC ;

LONG, SI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1116-1124

[6] SELF-ALIGN IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) FOR HIGH-SPEED GAAS ICS [J].

YAMASAKI, K ;

ASAI, K ;

MIZUTANI, T ;

KURUMADA, K .

ELECTRONICS LETTERS, 1982, 18 (03) :119-121

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