LSI PROCESSING TECHNOLOGY FOR PLANAR GAAS INTEGRATED-CIRCUITS

被引：70

作者：

WELCH, BM

SHEN, Y

ZUCCA, R

EDEN, RC

LONG, SI

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 06期

关键词：

D O I：

10.1109/T-ED.1980.19994

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1116 / 1124

页数：9

共 16 条

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[2] PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC [J].

EDEN, RC ;

WELCH, BM ;

ZUCCA, R ;

LONG, SI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :299-317

[3]

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[4]

EDEN RC, 1980 ISSCC TECH DIG, P122

[5]

EISEN FE, 1976, 5TH P INT C ION IMPL

[6] LOW-POWER GAAS DIGITAL INTEGRATED-CIRCUITS WITH NORMALLY-OFF MESFETS [J].

FUKUTA, M ;

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KUSAKAWA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) :1340-1340

[7]

LONG SI, 1979, 1979 DIG IEEE MTT IN

[8]

LONG SI, 1979, INT C SOLID STATE DE

[9]

LUNDGREN RE, 1979, SEP IEEE GAAS IC S L

[10] QUASI-NORMALLY-OFF MESFET LOGIC FOR HIGH-PERFORMANCE GAAS ICS [J].

NUZILLAT, G ;

BERT, G ;

NGU, TP ;

GLOANEC, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1102-1109

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