QUASI-NORMALLY-OFF MESFET LOGIC FOR HIGH-PERFORMANCE GAAS ICS

被引：17

作者：

NUZILLAT, G

BERT, G

NGU, TP

GLOANEC, M

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 06期

关键词：

D O I：

10.1109/T-ED.1980.19992

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1102 / 1109

页数：8

共 18 条

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[8] LOW-POWER GAAS DIGITAL INTEGRATED-CIRCUITS WITH NORMALLY-OFF MESFETS [J].

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