IMPLICATIONS OF THE INTERFACE EFFECTS IN THE NORMALLY-OFF TYPE GAAS MESFETS

被引:6
作者
BERT, G
NUZILLAT, G
机构
来源
REVUE DE PHYSIQUE APPLIQUEE | 1978年 / 13卷 / 12期
关键词
D O I
10.1051/rphysap:019780013012077100
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:771 / 775
页数:5
相关论文
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[4]   CURRENT SATURATION AND SMALL-SIGNAL CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS [J].
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BECHTEL, NG .
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ISHIKAWA H, 1977, FEB ISSCC, P200
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TRANDUC H, 1978, REV PHYS APPL, V13
[7]  
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