OPTIMIZATION OF GAAS-MESFET LOGIC GATES WITH SUB-NANOSECOND PROPAGATION DELAYS

被引:15
作者
BARNA, A
LIECHTI, CA
机构
[1] Hewlett-Packard Laboratories, Palo Alto
关键词
D O I
10.1109/JSSC.1979.1051248
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the optimization of logic gates using GaAs MESFET's. Nonlinear stored charges are evaluated, and propagation delays and power dissipations are computed for logic gates with and without load driver. The performances of these two circuit alternatives are compared, and parameter values are optimized to provide a minimum propagation delay for a given power allocation. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码:708 / 715
页数:8
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