HIGH-SPEED INTEGRATED LOGIC WITH GAAS MESFETS

被引：94

作者：

VANTUYL, RL ^{[1
]}

LIECHTI, CA ^{[1
]}

机构：

[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

来源：

关键词：

D O I：

10.1109/JSSC.1974.1050512

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：269 / 276

页数：8

共 15 条

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[J]. ELECTRONICS LETTERS, 1973, 9 (10) : 232 - 234
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[7] DESIGN AND FABRICATION OF SUBNANOSECOND CURRENT SWITCH AND TRANSISTORS
DHAKA, VA
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (06) : 476 - +
[8] DRANGEID KE, 1972, IEEE J SOLID-ST CIRC, VSC 7, P277
[9] FUJIOKA A, 1973, ISSCC DIG TECH PAPER, V16, P164
[10] LIECHTI CA, 1974, IEEE T MICROWAVE THE, VMT22, P510