WARM-CARRIER MICROWAVE TRANSPORT IN SI

被引：17

作者：

HOLMKENN.JW

CHAMPLIN, KS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 04期

关键词：

D O I：

10.1063/1.1661413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1889 / &

共 14 条

[1]

Beatty R. W., 1960, IRE T INSTRUMENTATIO, V9, P219

[2] ELECTRODELESS DETERMINATION OF SEMICONDUCTOR CONDUCTIVITY FROM TE01 DEGREES-MODE REFLECTIVITY [J].

CHAMPLIN, KS ;

HOLM, JD ;

GLOVER, GH .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) :96-+

[3] CHARGE CARRIER INERTIA IN SEMICONDUCTORS [J].

CHAMPLIN, KS ;

ARMSTRONG, DB ;

GUNDERSON, PD .

PROCEEDINGS OF THE IEEE, 1964, 52 (06) :677-+

[4] PLASMA-FILLED WAVEGUIDE WITH AXIAL MAGNETIZATION .2. SCATTERING BY A SECTION OF FINITE LENGTH [J].

CHAMPLIN, KS ;

GLOVER, GH ;

HOLMKENN.JW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3538-&

[5]

CHAMPLIN KS, 1967, IEEE T MICROW THEORY, VMT15, P477

[6]

CONWELL EM, 1967, SOLID STATE PHYSICS, V9

[7]

GIBSON AF, 1961, PHYS CHEM SOLIDS, V19, P193

[8] MICROWAVE CONDUCTIVITY OF SILICON AND GERMANIUM [J].

HOLM, JD ;

CHAMPLIN, KS .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (01) :275-&

[9] WARM-CARRIER DC TRANSPORT IN SI [J].

HOLMKENN.JW .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1878-&

[10]

HOLMKENNEDY JW, UNPUBLISHED

← 1 2 →