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EXPERIMENTAL-STUDY OF IMPLANTATION-INDUCED DISORDERING IN INGAASP STRAINED MULTIPLE-QUANTUM-WELL HETEROSTRUCTURES

被引：15
作者：
ELENKRIG, BB
THOMPSON, DA
SIMMONS, JG
BRUCE, DM
SI, Y
ZHAO, J
EVANS, JD
TEMPLETON, IM
机构：
[1] TIANJIU NORMAL UNIV,DEPT PHYS,TIANJIN,PEOPLES R CHINA
[2] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 10期
关键词：
D O I：
10.1063/1.112082
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of strain on F+ and Si+ implantation-induced compositional disordering in InGaAsP strained layer multiple-quantum-well (MQW) heterostructures has been studied by investigating the temperature dependence of the photoluminescence (PL) spectra and spatial distribution of degree of polarization of PL for both compressive and tensile strained, and unstrained MQW heterostructures. It was found that under similar implantation and anneal conditions a spectral blueshift occurs which is largest in the compressively strained structure and the smallest in the tensile one. This behavior is explained in terms of implantation-enhanced interdiffusion, by taking into account the composition differences of elements between the wells and barriers. The development of strain related to the process of interdiffusion has been experimentally observed.
引用
收藏
页码：1239 / 1241
页数：3
相关论文
共 11 条
[1]   EFFECTS OF STRESS ON THRESHOLD, WAVELENGTH, AND POLARIZATION OF THE OUTPUT OF INGAASP SEMICONDUCTOR DIODE-LASERS [J].
ADAMS, CS ;
CASSIDY, DT .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) :6631-6638
[2]   QUANTUM-WELL LASER WITH INTEGRATED PASSIVE WAVE-GUIDE FABRICATED BY NEUTRAL IMPURITY DISORDERING [J].
ANDREW, SR ;
MARSH, JH ;
HOLLAND, MC ;
KEAN, AH .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (05) :426-428
[3]  
DEPP DG, 1988, J APPL PHYS, V46, pR93
[4]   STRAIN-INDUCED PERFORMANCE IMPROVEMENTS IN LONG-WAVELENGTH, MULTIPLE-QUANTUM-WELL, RIDGE-WAVE-GUIDE LASERS WITH ALL QUATERNARY ACTIVE REGIONS [J].
EVANS, JD ;
MAKINO, T ;
PUETZ, N ;
SIMMONS, JG ;
THOMSPON, DA .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (04) :299-301
[5]  
MARSH JH, 1991, OPT QUANT ELECTRON, V23, P941
[6]   DETERMINATION OF THE INTERDIFFUSION OF AL AND GA IN UNDOPED (AL,GA)AS/GAAS QUANTUM-WELLS [J].
SCHLESINGER, TE ;
KUECH, T .
APPLIED PHYSICS LETTERS, 1986, 49 (09) :519-521
[7]   DESTRUCTION MECHANISM OF III-V COMPOUND QUANTUM-WELL STRUCTURES DUE TO IMPURITY DIFFUSION [J].
TAN, TY ;
GOSELE, U .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1841-1845
[8]   DISORDERING OF INGAAS-INP QUANTUM WELLS BY SI IMPLANTATION [J].
TELL, B ;
JOHNSON, BC ;
ZYSKIND, JL ;
BROWN, JM ;
SULHOFF, JW ;
BROWNGOEBELER, KF ;
MILLER, BI ;
KOREN, U .
APPLIED PHYSICS LETTERS, 1988, 52 (17) :1428-1430
[9]   THERMAL-STABILITY OF INGAAS INP QUANTUM-WELL STRUCTURES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].
TEMKIN, H ;
CHU, SNG ;
PANISH, MB ;
LOGAN, RA .
APPLIED PHYSICS LETTERS, 1987, 50 (15) :956-958
[10]   HIGH-PERFORMANCE 1.5 MICRO-M WAVELENGTH INGAAS-INGAASP STRAINED QUANTUM-WELL LASERS AND AMPLIFIERS [J].
THIJS, PJA ;
TIEMEIJER, LF ;
KUINDERSMA, PI ;
BINSMA, JJM ;
VANDONGEN, T .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1426-1439
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