EFFECTS OF STRESS ON THRESHOLD, WAVELENGTH, AND POLARIZATION OF THE OUTPUT OF INGAASP SEMICONDUCTOR DIODE-LASERS

被引：39

作者：

ADAMS, CS

CASSIDY, DT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 12期

关键词：

D O I：

10.1063/1.342045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6631 / 6638

页数：8

共 35 条

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