EFFECT OF UNIAXIAL-STRESS ON OPTICAL GAIN IN SEMICONDUCTORS

[1] Akhmedov D., 1980, Soviet Technical Physics Letters, V6, P304

[2] BIR G, 1974, SYMMETRY STRAIN INDU, P300

[3] CASEY HC, 1978, HETEROSTRUCTURE LA A

[4] DUTTA NK, UNPUB POSSIBLE EXPLA

[5] Elyukhin V. A., 1980, Soviet Technical Physics Letters, V6, P307

[6] MODE SELECTION IN GAAS INJECTION LASERS RESULTING FROM FRESNEL REFLECTION [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (07) : 772 - 776

[7] IKEGAMI I, 1972, IEEE J QUANTUM ELECT, V8, P470

[8] BAND STRUCTURE OF INDIUM ANTIMONIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 249 - 261

[9] KELDYSH LV, 1970, SOV PHYS SEMICOND+, V3, P876

[10] BEHAVIOR OF THRESHOLD CURRENT AND POLARIZATION OF STIMULATED EMISSION OF GAAS INJECTION LASERS UNDER UNIAXIAL STRESS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) : 338 - 341

[1] Akhmedov D., 1980, Soviet Technical Physics Letters, V6, P304

[2] BIR G, 1974, SYMMETRY STRAIN INDU, P300

[3] CASEY HC, 1978, HETEROSTRUCTURE LA A

[4] DUTTA NK, UNPUB POSSIBLE EXPLA

[5] Elyukhin V. A., 1980, Soviet Technical Physics Letters, V6, P307

[6] MODE SELECTION IN GAAS INJECTION LASERS RESULTING FROM FRESNEL REFLECTION [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (07) : 772 - 776

[7] IKEGAMI I, 1972, IEEE J QUANTUM ELECT, V8, P470

[8] BAND STRUCTURE OF INDIUM ANTIMONIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 249 - 261

[9] KELDYSH LV, 1970, SOV PHYS SEMICOND+, V3, P876

[10] BEHAVIOR OF THRESHOLD CURRENT AND POLARIZATION OF STIMULATED EMISSION OF GAAS INJECTION LASERS UNDER UNIAXIAL STRESS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) : 338 - 341