EFFECT OF BARRIER WIDTH ON PERFORMANCE OF LONG WAVELENGTH GAINAS/INP MULTI-QUANTUM-WELL LASERS

被引：13

作者：

WILLIAMS, PJ

ROBBINS, DJ

CUSH, R

SCOTT, MD

DAVIES, JI

MARSHALL, AC

RIFFAT, J

CARTER, AC

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 14期

关键词：

D O I：

10.1049/el:19880585

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：859 / 860

页数：2

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[1] LOW INTERNAL LOSS SEPARATE CONFINEMENT HETEROSTRUCTURE INGAAS INGAASP QUANTUM-WELL LASER
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[2] SOME DESIGN CONSIDERATIONS FOR MULTI-QUANTUM-WELL LASERS
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[3] DOUBLE HETEROSTRUCTURE AND MULTIQUANTUM-WELL LASERS AT 1.5-1.7 MU-M GROWN BY ATMOSPHERIC-PRESSURE MOVPE
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[4] CHEMICAL BEAM EPITAXIAL-GROWTH OF VERY LOW THRESHOLD GA0.47IN0.53AS-INP DOUBLE-HETEROSTRUCTURE AND MULTIQUANTUM WELL LASERS
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[J]. APPLIED PHYSICS LETTERS, 1986, 49 (16) : 1010 - 1012
[5] OPTICAL TIME-OF-FLIGHT MEASUREMENT OF CARRIER DIFFUSION AND TRAPPING IN AN INGAAS/INP HETEROSTRUCTURE
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (08) : 590 - 592
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