CHEMICAL BEAM EPITAXIAL-GROWTH OF VERY LOW THRESHOLD GA0.47IN0.53AS-INP DOUBLE-HETEROSTRUCTURE AND MULTIQUANTUM WELL LASERS

被引：29

作者：

TSANG, WT

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 16期

关键词：

D O I：

10.1063/1.97455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1010 / 1012

页数：3

相关论文

共 25 条

[1] ASAHI H, 1984, 9TH IEEE INT SEM LAS, P82
[2] GAIN SPECTRA OF QUANTUM-WELL LASERS
BURT, MG
[J]. ELECTRONICS LETTERS, 1983, 19 (06) : 210 - 211
[3] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS
CALAWA, AR
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703
[4] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES
DINGLE, R
WIEGMANN, W
HENRY, CH
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830
[5] DINGLE R, 1976, Patent No. 3982207
[6] GAIN AND CARRIER LIFETIME MEASUREMENTS IN ALGAAS SINGLE QUANTUM WELL LASERS
DUTTA, NK
HARTMAN, RL
TSANG, WT
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) : 1243 - 1246
[7] FABRICATION AND PERFORMANCE-CHARACTERISTICS OF 1.55-MU-M INGAASP MULTIQUANTUM WELL RIDGE GUIDE LASERS
DUTTA, NK
WESSEL, T
OLSSON, NA
LOGAN, RA
KOSZI, LA
YEN, R
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 525 - 527
[8] QUANTUM-WELL HETEROSTRUCTURE LASERS
HOLONYAK, N
KOLBAS, RM
DUPUIS, RD
DAPKUS, PD
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 170 - 186
[9] NEW GAAS, GAP, AND GAASX P1-X VACUUM DEPOSITION TECHNIQUE USING ARSINE AND PHOSPHINE GAS
MORRIS, FJ
FUKUI, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (02): : 506 - 510
[10] DOUBLE HETEROSTRUCTURE AND MULTIQUANTUM-WELL LASERS AT 1.5-1.7 MU-M GROWN BY ATMOSPHERIC-PRESSURE MOVPE
NELSON, AW
MOSS, RH
REGNAULT, JC
SPURDENS, PC
WONG, S
[J]. ELECTRONICS LETTERS, 1985, 21 (08) : 329 - 331