NEW GAAS, GAP, AND GAASX P1-X VACUUM DEPOSITION TECHNIQUE USING ARSINE AND PHOSPHINE GAS

被引：24

作者：

MORRIS, FJ ^{[1
]}

FUKUI, H ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILLS,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1974年 / 11卷 / 02期

关键词：

D O I：

10.1116/1.1317848

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：506 / 510

页数：5

共 8 条

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[2] SILICON DIODE ARRAY CAMERA TUBE
CROWELL, MH
LABUDA, EF
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1969, 48 (05): : 1481 - +
[3] STRUCTURAL + OPTICAL CHARACTERISTICS OF THIN GAAS FILMS
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PANKEY, T
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (07) : 2203 - &
[4] FUKUI H, 1970, IEEE IEDM
[5] FORMATION OF THICK SEMI-INSULATING GAAS FILMS BY FLASH EVAPORATION
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HULL, EM
GERETH, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) : 857 - &
[6] MORRIS FJ, 1972, IEEE T ELECTRON DEV, VED19, P1139
[7] TIETJEN JJ, 1971, J VAC SCI TECHNOL, V8
[8] 1969, P CAMERA TUBE S