INSITU INFRARED-SPECTROSCOPY OF MOLECULAR-BEAM EPITAXY GROWN GAAS

被引：13

作者：

SADWICK, LP ^{[1
]}

WANG, KL ^{[1
]}

JOSEPH, DL ^{[1
]}

HICKS, RF ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,DEPT CHEM ENGN,LOS ANGELES,CA 90024

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.584732

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：273 / 276

页数：4

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