HIGH-SPEED INGAAS-INP P-I-N PHOTODIODES FABRICATED ON A SEMI-INSULATING SUBSTRATE

被引：8

作者：

CRAWFORD, DL ^{[1
]}

WEY, YG ^{[1
]}

MAR, A ^{[1
]}

BOWERS, JE ^{[1
]}

HAFICH, MJ ^{[1
]}

ROBINSON, GY ^{[1
]}

机构：

[1] COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST & ELECT ENGN,FT COLLINS,CO 80523

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 09期

关键词：

D O I：

10.1109/68.59338

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAs-InP p-i-n photodiodes have been fabricated on a semiinsulating substrate, and exhibit a measurement-limited full width at half maximum (FWHM) impulse response of 16 ps up to relatively high input intensities of 50 kW/cm2. These mass-produced devices have ∞ very low parasitic impedances, and operate at high frequencies even at i zero bias voltages. © 1990 IEEE

引用

页码：647 / 649

页数：3

共 7 条

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