DEFECT-INDUCED CONDUCTION ANOMALIES IN N-TYPE HG1-XCDXTE

被引:3
作者
HOERSTEL, W
KLIMAKOV, A
KRAMER, R
SCHMIEDE, A
机构
[1] Department of Physics, Humboldt-University, Berlin
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 119卷 / 02期
关键词
D O I
10.1002/pssa.2211190222
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electrical properties of n‐type Hg1−xCdxTe LPE‐layers are analysed in terms of conduction band electron conductivity and impurity band conduction. In material showing a low concentration of compensating acceptors (K < 0.45) the usual electron conduction occurs. The electron mobility is limited by impurity scattering and lattice scattering in the low and in the high temperature range, resp. High compensated n‐type layers (K > 0.88) show an additional impurity band conduction. From comparative investigations on n‐ and p‐type annealed layers it is seen, that the impurity band is formed by approximately empty donor states on the conduction band edge. The small occupation of the donor states is caused by the high concentration of compensating acceptors. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA
引用
收藏
页码:589 / 594
页数:6
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