EVIDENCE OF ANOMALOUS BEHAVIOR IN LOW-N-TYPE MERCURY CADMIUM TELLURIDE INDUCED BY EXTENDED DEFECTS

被引:21
作者
PELLICIARI, B
DESTEFANIS, GL
DICIOCCIO, L
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 02期
关键词
D O I
10.1116/1.576131
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
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页码:314 / 320
页数:7
相关论文
共 7 条
[1]   INHOMOGENEITY MODEL FOR ANOMALOUS HALL-EFFECTS IN N-TYPE HG0.8CD0.2 TE LIQUID-PHASE-EPITAXY FILMS [J].
CHEN, MC ;
PARKER, SG ;
WEIRAUCH, DF .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) :3150-3153
[2]  
DESTEFANIS GL, 1986, C PUBLICATION I ELEC, V263
[3]   HALL-EFFECT AND RESISTIVITY IN LIQUID-PHASE-EPITAXIAL LAYERS OF HGCDTE [J].
LOU, LF ;
FRYE, WH .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) :2253-2267
[4]   STATE OF THE ART OF LPE HGCDTE AT LIR [J].
PELLICIARI, B .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :146-160
[5]   ROLE OF DISLOCATIONS IN N-TYPE ANNEALED CDHGTE GROWN BY LIQUID-PHASE EPITAXY [J].
PELLICIARI, B ;
BARET, G .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3986-3988
[6]  
PELLICIARI B, 1987, UNPUB NATO WORKSHOP
[7]  
PELLICIARI B, 1987, SPIE, V865, P22