STATE OF THE ART OF LPE HGCDTE AT LIR

被引:55
作者
PELLICIARI, B
机构
关键词
D O I
10.1016/0022-0248(90)90712-T
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:146 / 160
页数:15
相关论文
共 12 条
  • [1] AMINGUAL D, 1986, SPIE, V659, P85
  • [2] BENSAHEL D, 1979, THESIS U GRENOBLE
  • [3] CHAMONAL JP, 1982, THESIS U GRENOBLE
  • [4] ELECTRICAL DOPING OF HGCDTE BY ION-IMPLANTATION AND HEAT-TREATMENT
    DESTEFANIS, GL
    [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 700 - 722
  • [5] DESTEFANIS GL, 1986, 3RD P INT C ADV INFR
  • [6] ENERGY-GAP VERSUS ALLOY COMPOSITION AND TEMPERATURE IN HG1-XCDXTE
    HANSEN, GL
    SCHMIT, JL
    CASSELMAN, TN
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 7099 - 7101
  • [7] HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7
  • [8] PELLICIARI B, 1987, MAR NATO WORKSH FREI
  • [9] PELLICIARI B, UNPUB APPL PHYS LETT
  • [10] PREPARATION OF CADMIUM TELLURIDE BY A PROGRAMMED SOLUTION GROWTH TECHNIQUE
    SCHAUB, B
    GALLET, J
    BRUNETJAILLY, A
    PELLICIARI, B
    [J]. REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02): : 147 - 150