ELECTRICAL DOPING OF HGCDTE BY ION-IMPLANTATION AND HEAT-TREATMENT

被引：213

作者：

DESTEFANIS, GL

机构：

[1] CEA, Grenoble, Fr, CEA, Grenoble, Fr

来源：

关键词：

This work was sponsored by DRET (Ministry of Defence);

D O I：

10.1016/0022-0248(90)90798-P

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：700 / 722

页数：23

共 81 条

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