DEPENDENCE OF JUNCTION FORMATION ON SUBSTRATE IN IMPLANTED HGCDTE

被引：20

作者：

BUBULAC, LO

机构：

来源：

关键词：

D O I：

10.1063/1.95786

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：976 / 978

页数：3

共 14 条

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[2] ION-IMPLANTATION STUDY OF HGCDTE
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GERTNER, ER
MARSHALL, ED
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 495 - 500
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[6] DESTEFANIS GL, 1983, NUCL INSTRUM METHODS, V567, P209
[7] LIQUID-PHASE EPITAXIAL-GROWTH OF LARGE AREA HG1-XCDXTE EPITAXIAL LAYERS
EDWALL, DD
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[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) : 1453 - 1460
[8] KOZYREV SP, 1983, SOV PHYS SEMICOND+, V17, P560
[9] OBSERVATION OF DISLOCATIONS IN CADMIUM TELLURIDE BY CATHODOLUMINESCENCE MICROSCOPY
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[J]. APPLIED PHYSICS LETTERS, 1979, 34 (09) : 574 - 575
[10] STUDIES OF ANOMALOUS DIFFUSION OF IMPURITIES IN SILICON
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