BORON ION-IMPLANTATION IN HG1-XCDXTE

[1] RESTSTRAHLEN SPECTRA OF HGTE AND CDXHG1-XTE [J]. SOLID STATE COMMUNICATIONS, 1972, 10 (09) : 875 - &

[2] DAMAGE AND LATTICE LOCATION STUDIES IN HG IMPLANTED HG1-XCDXTE [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 247 - 252

[3] HIGH-PERFORMANCE BACKSIDE-ILLUMINATED HG0.78CD0.22TE-CDTE(LAMBDA-CO=10-MU-M) PLANAR DIODES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (05) : 486 - 488

[4] DESTEFANIS GL, COMMUNICATION

[5] SIMPLE METHOD FOR CALCULATION OF ENERGY DEPOSITION PROFILES FROM RANGE DATA OF IMPLANTED IONS [J]. APPLIED PHYSICS, 1977, 12 (04): : 347 - 353

[6] GIBBONS JF, 1975, PROJECTED RANGE STAT

[7] KOEHLER T, 1979, Patent No. 4137544

[8] PROPERTIES OF ION-IMPLANTED JUNCTIONS IN MERCURY CADMIUM TELLURIDE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 37 - 43

[9] MAIER H, 1980, CRYSTALS GROWTH PROP, V4, P147

[10] ELECTRICAL-PROPERTIES OF ION-IMPLANTED LAYERS IN HG0.79CD0.21TE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6386 - 6389

[1] RESTSTRAHLEN SPECTRA OF HGTE AND CDXHG1-XTE [J]. SOLID STATE COMMUNICATIONS, 1972, 10 (09) : 875 - &

[2] DAMAGE AND LATTICE LOCATION STUDIES IN HG IMPLANTED HG1-XCDXTE [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 247 - 252

[3] HIGH-PERFORMANCE BACKSIDE-ILLUMINATED HG0.78CD0.22TE-CDTE(LAMBDA-CO=10-MU-M) PLANAR DIODES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (05) : 486 - 488

[4] DESTEFANIS GL, COMMUNICATION

[5] SIMPLE METHOD FOR CALCULATION OF ENERGY DEPOSITION PROFILES FROM RANGE DATA OF IMPLANTED IONS [J]. APPLIED PHYSICS, 1977, 12 (04): : 347 - 353

[6] GIBBONS JF, 1975, PROJECTED RANGE STAT

[7] KOEHLER T, 1979, Patent No. 4137544

[8] PROPERTIES OF ION-IMPLANTED JUNCTIONS IN MERCURY CADMIUM TELLURIDE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 37 - 43

[9] MAIER H, 1980, CRYSTALS GROWTH PROP, V4, P147

[10] ELECTRICAL-PROPERTIES OF ION-IMPLANTED LAYERS IN HG0.79CD0.21TE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6386 - 6389